Title :
Design of dual-band tri-way GaN doherty power amplifier with frequency dependent power division
Author :
Li, Xin ; Chen, Wei-Hao ; Feng, Zhen-Hua ; Ghannouchi, Fadhel M.
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Abstract :
A dual-band tri-way Doherty power amplifier (PA) with frequency dependent power division is proposed. Compared to the dual-band two-way Doherty PA, the power back-off range of the dual-band tri-way Doherty PA is extended efficiently. Due to frequency dependent power division, the efficiency of the proposed PA is improved at two different frequencies concurrently. The measured results show that power-added efficiencies of 61 and 44% are reached at the 9%dB back-off point from saturation at 0.9 and 2.31%GHz, respectively.
Keywords :
III-V semiconductors; gallium compounds; power amplifiers; power dividers; wide band gap semiconductors; GaN; back-off point; dual-band tri-way Doherty power amplifier; dual-band two-way Doherty PA; efficiency 44 percent; efficiency 61 percent; frequency 0.9 GHz; frequency 2.31 GHz; frequency dependent power division; power back-off range; power-added efficiency; saturation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.1203
