A novel trench termination design for 100-V TMBS diode application

Author

Hsu, Wesley Chih-Wei ; Liu, Chung-Min ; Kao, Ming-Jer ; Kung, Pu-Ju ; Tsai, Ming-Jinn

Author_Institution

Dept. of Power Device Technol., Electron. Res. & Service Organ., Hsinchu, Taiwan

Volume

22

Issue

11

fYear

2001

Firstpage

551

Lastpage

552

Abstract

In this letter, a novel trench termination structure that can inhibit the reverse leakage current substantially and reduce the process cost is introduced. For trench type power devices, such as trench MOS barrier Schottky (TMBS) diodes, this new termination structure can be processed simultaneously with the active region without any additional mask. Simulation and experimental results show that TMBS diodes with this new termination structure can achieve a reverse blocking voltage of 100 V with a leakage current density as low as 8.4/spl times/10/sup -4/ A/cm/sup 2/.

Keywords

MIS devices; Schottky diodes; current density; leakage currents; power semiconductor diodes; 100 V; active region; leakage current density; process cost; reverse blocking voltage; reverse leakage current; simulation; trench MOS barrier Schottky diodes; trench termination structure; trench type power devices; Costs; Etching; Fabrication; Insulated gate bipolar transistors; Leakage current; Medical simulation; Power semiconductor devices; Schottky diodes; Semiconductor diodes; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.962660

Filename

962660