Title :
A novel trench termination design for 100-V TMBS diode application
Author :
Hsu, Wesley Chih-Wei ; Liu, Chung-Min ; Kao, Ming-Jer ; Kung, Pu-Ju ; Tsai, Ming-Jinn
Author_Institution :
Dept. of Power Device Technol., Electron. Res. & Service Organ., Hsinchu, Taiwan
Abstract :
In this letter, a novel trench termination structure that can inhibit the reverse leakage current substantially and reduce the process cost is introduced. For trench type power devices, such as trench MOS barrier Schottky (TMBS) diodes, this new termination structure can be processed simultaneously with the active region without any additional mask. Simulation and experimental results show that TMBS diodes with this new termination structure can achieve a reverse blocking voltage of 100 V with a leakage current density as low as 8.4/spl times/10/sup -4/ A/cm/sup 2/.
Keywords :
MIS devices; Schottky diodes; current density; leakage currents; power semiconductor diodes; 100 V; active region; leakage current density; process cost; reverse blocking voltage; reverse leakage current; simulation; trench MOS barrier Schottky diodes; trench termination structure; trench type power devices; Costs; Etching; Fabrication; Insulated gate bipolar transistors; Leakage current; Medical simulation; Power semiconductor devices; Schottky diodes; Semiconductor diodes; Voltage;
Journal_Title :
Electron Device Letters, IEEE
