Guidelines for designing BJT amplifiers with low 1/f AM and PM noise

Author

Ferre-Pikal, Eva S. ; Walls, Fred L. ; Nelson, Craig W.

Author_Institution

Nat. Inst. of Stand. & Technol., Boulder, CO, USA

Volume

44

Issue

2

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

335

Lastpage

343

Abstract

In this paper we discuss guidelines for designing linear bipolar junction transistor amplifiers with low 1/f amplitude modulation (AM) and phase modulation (PM) noise. These guidelines are derived from a new theory that relates AM and PM noise to transconductance fluctuations, junction capacitance fluctuations, and circuit architecture. We analyze the noise equations of each process for a common emitter (CE) amplifier and use the results to suggest amplifier designs that minimize the 1/f noise while providing other required attributes such as high gain. Although we use a CE amplifier as an example, the procedure applies to other configurations as well. Experimental noise results for several amplifier configurations are presented.

Keywords

1/f noise; HF amplifiers; VHF amplifiers; amplitude modulation; bipolar transistor circuits; circuit noise; circuit optimisation; distributed amplifiers; flicker noise; nonlinear network synthesis; phase modulation; 1/f noise minimization; 100 MHz; 5 MHz; amplifier configurations; amplitude modulation noise; circuit architecture; common emitter amplifier; distribution amplifier; flicker noise; high gain; junction capacitance fluctuations; linear BJT amplifier design; linear bipolar junction transistor amplifiers; low 1/f AM noise; low 1/f PM noise; noise equations; phase modulation noise; transconductance fluctuations; Amplitude modulation; Capacitance; Circuit noise; Fluctuations; Guidelines; Low-noise amplifiers; Noise level; Phase modulation; Phase noise; Transconductance;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.585118

Filename

585118