DocumentCode :
1546271
Title :
Surface micromachined solenoid on-Si and on-glass inductors for RF applications
Author :
Jun-Bo Yoon ; Bon-Kee Kim ; Chul-Hi Han ; Euisik Yoon ; Choong-Ki Kim
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Volume :
20
Issue :
9
fYear :
1999
Firstpage :
487
Lastpage :
489
Abstract :
RF performance of surface micromachined solenoid on-chip inductors fabricated on a standard silicon substrate (10 /spl Omega//spl middot/cm) has been investigated and the results are compared with the same inductors on glass. The solenoid inductor on Si with a 15-μm thick insulating layer achieves peak quality (Q-) factor of 16.7 at 2.4 GHz with inductance of 2.67 nH. This peak Q-factor is about two-thirds of that of the same inductor fabricated on glass. The highest performance has been obtained from the narrowest-pitched on-glass inductor, which shows inductance of 2.3 nH, peak Q-factor of 25.1 at 8.4 GHz, and spatial inductance density of 30 nH/mm2. Both on-Si and on-glass inductors have been modeled by lumped circuits, and the geometrical dependence of the inductance and Q-factor have been investigated as well.
Keywords :
Q-factor; inductors; micromachining; solenoids; RF MEMS; Si; glass substrate; inductance; lumped circuit model; monolithic integration; passive component; quality factor; silicon substrate; solenoid on-chip inductor; surface micromachining; Circuits; Glass; Inductance; Inductors; Insulation; Q factor; Radio frequency; Silicon; Solenoids; Solid modeling;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.784461
Filename :
784461
Link To Document :
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