• DocumentCode
    1546277
  • Title

    High-field electron velocity in silicon surface-accumulation layers

  • Author

    Arnold, Emil ; Letavic, Theodore ; Herko, Sam

  • Author_Institution
    Philips Electron. North America Corp., Briarcliff Manor, NY, USA
  • Volume
    20
  • Issue
    9
  • fYear
    1999
  • Firstpage
    490
  • Lastpage
    492
  • Abstract
    Temperature dependence of saturation velocity in bulk silicon and in surface-accumulation layers was studied between room temperature and 600 K. The saturation electron velocity in bulk silicon was found to have a steeper temperature dependence than previously reported. The saturation velocity in surface-accumulation layers was found to be equal to the electron velocity in the bulk, and independent of the perpendicular electric field.
  • Keywords
    accumulation layers; electron mobility; elemental semiconductors; high field effects; silicon; 20 to 600 K; Si; high field electron velocity; saturation velocity; silicon surface accumulation layer; temperature dependence; Doping profiles; Electron mobility; MOS devices; Measurement techniques; Ohmic contacts; Resistors; Silicon; Temperature dependence; Voltage; Wafer bonding;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.784462
  • Filename
    784462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1546277