Title :
1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement
Author :
Nakao, Ryo ; Arai, Masakazu ; Kobayashi, Wataru ; Yamamoto, Tsuyoshi ; Matsuo, Shinji
Author_Institution :
NTT Device Technol. Labs., NTT Corp., Atsugi, Japan
Abstract :
We demonstrate a lattice relaxation control by in situ curvature measurement for a metamorphic buffer. Using this relaxation control, we investigated a thin (240 nm) In0.15Ga0.85 As metamorphic buffer for fabricating an unstrained In0.10Ga0.90As quasi-substrate on a GaAs substrate and succeeded in fabricating a 1.3-μm metamorphic InGaAs multiplequantum well laser diode (LD) on the metamorphic buffer. We confirmed that the LD was directly modulated at 25 Gb/s with a high-characteristic temperature (T0 = 187 K).
Keywords :
III-V semiconductors; curvature measurement; gallium arsenide; indium compounds; optical fabrication; optical modulation; quantum well lasers; GaAs; GaAs substrate; InGaAs; InGaAs MQW metamorphic laser diode; bit rate 25 Gbit/s; direct modulation; high-characteristic temperature; in situ curvature measurement; lattice relaxation control; metamorphic buffer; metamorphic multiplequantum well laser diode; size 240 nm; temperature 187 K; wavelength 1.3 mum; Epitaxial layers; Gallium arsenide; Lattices; Quantum well devices; Strain; Substrates; Temperature; Diode lasers; metamorphic; quantum well lasers; semiconductor growth;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2015.2420595
