Microwave propagation in p-i-n transmission lines

Author

Zhu, Z. ; Vorst, A. Vander

Author_Institution

Microelectron. Lab., Univ. Catholique de Louvain, Belgium

Volume

7

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

159

Lastpage

161

Abstract

In this paper the layered structure of p-i-n photodetectors is modeled for the first time as a transmission line. The method of lines, as a two-dimensional (2-D) full-wave approach, is used to calculate the propagation constant. The numerical results agree well with measurements made on experimental devices over a frequency range of 1-30 GHz. An important new result is that the analysis of the current distribution in the bottom shielding layer shows that the finite conductivity of the high-doped semiconductor material in the layer results in a significant edge effect. This effect is properly taken into account in our 2-D model

Keywords

current distribution; microwave propagation; p-i-n photodiodes; photodetectors; semiconductor device models; transmission line theory; 1 to 30 GHz; 2D full-wave approach; 2D model; current distribution; edge effect; finite conductivity; highly-doped semiconductor material; layered structure; method of lines; microwave propagation; p-i-n photodetectors; p-i-n transmission lines; propagation constant; shielding layer; transmission line model; Conductivity; Current distribution; Frequency measurement; Microwave propagation; PIN photodiodes; Photodetectors; Propagation constant; Transmission line measurements; Transmission lines; Two dimensional displays;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.585202

Filename

585202