Title :
Microwave propagation in p-i-n transmission lines
Author :
Zhu, Z. ; Vorst, A. Vander
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain, Belgium
fDate :
6/1/1997 12:00:00 AM
Abstract :
In this paper the layered structure of p-i-n photodetectors is modeled for the first time as a transmission line. The method of lines, as a two-dimensional (2-D) full-wave approach, is used to calculate the propagation constant. The numerical results agree well with measurements made on experimental devices over a frequency range of 1-30 GHz. An important new result is that the analysis of the current distribution in the bottom shielding layer shows that the finite conductivity of the high-doped semiconductor material in the layer results in a significant edge effect. This effect is properly taken into account in our 2-D model
Keywords :
current distribution; microwave propagation; p-i-n photodiodes; photodetectors; semiconductor device models; transmission line theory; 1 to 30 GHz; 2D full-wave approach; 2D model; current distribution; edge effect; finite conductivity; highly-doped semiconductor material; layered structure; method of lines; microwave propagation; p-i-n photodetectors; p-i-n transmission lines; propagation constant; shielding layer; transmission line model; Conductivity; Current distribution; Frequency measurement; Microwave propagation; PIN photodiodes; Photodetectors; Propagation constant; Transmission line measurements; Transmission lines; Two dimensional displays;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
