Title :
A precision capacitance cell for measurement of thin film out-of-plane expansion. III. Conducting and semiconducting materials
Author :
Snyder, Chad R. ; Mopsik, Frederick I.
Author_Institution :
Polymers Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fDate :
10/1/2001 12:00:00 AM
Abstract :
For pt. II see Rev. Sci. Instrum., vol. 70, pp. 2424-2431 (1999).This paper describes the construction, calibration, and use of a precision capacitance-based metrology for the measurement of the thermal and hygrothermal (swelling) expansion of thin films. It is demonstrated that with this version of our capacitance cell, materials ranging in electrical properties from insulators to conductors can be measured. The results of our measurements on p-type ⟨100⟩-oriented single crystal silicon are compared to the recommended standard reference values from the literature and are shown to be in excellent agreement
Keywords :
capacitance measurement; dielectric thin films; polymer films; semiconductor thin films; silicon; swelling; thermal expansion measurement; Si; capacitance measurements; coefficient of thermal expansion; conducting materials; guarded electrode; high sensitivity displacement; hygrothermal expansion measurements; inner layer dielectrics; p-type (100)-oriented single crystal; polymers; precision capacitance cell; semiconducting materials; swelling; thermal expansion measurements; thin film out-of-plane expansion; Calibration; Capacitance measurement; Conducting materials; Crystalline materials; Dielectrics and electrical insulation; Electric variables measurement; Metrology; Silicon; Thermal expansion; Transistors;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
