A precision capacitance cell for measurement of thin film out-of-plane expansion. III. Conducting and semiconducting materials

Author

Snyder, Chad R. ; Mopsik, Frederick I.

Author_Institution

Polymers Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

Volume

50

Issue

5

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

1212

Lastpage

1215

Abstract

For pt. II see Rev. Sci. Instrum., vol. 70, pp. 2424-2431 (1999).This paper describes the construction, calibration, and use of a precision capacitance-based metrology for the measurement of the thermal and hygrothermal (swelling) expansion of thin films. It is demonstrated that with this version of our capacitance cell, materials ranging in electrical properties from insulators to conductors can be measured. The results of our measurements on p-type ⟨100⟩-oriented single crystal silicon are compared to the recommended standard reference values from the literature and are shown to be in excellent agreement

Keywords

capacitance measurement; dielectric thin films; polymer films; semiconductor thin films; silicon; swelling; thermal expansion measurement; Si; capacitance measurements; coefficient of thermal expansion; conducting materials; guarded electrode; high sensitivity displacement; hygrothermal expansion measurements; inner layer dielectrics; p-type (100)-oriented single crystal; polymers; precision capacitance cell; semiconducting materials; swelling; thermal expansion measurements; thin film out-of-plane expansion; Calibration; Capacitance measurement; Conducting materials; Crystalline materials; Dielectrics and electrical insulation; Electric variables measurement; Metrology; Silicon; Thermal expansion; Transistors;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.963185

Filename

963185