DocumentCode :
1546775
Title :
I2L: Coexistence with NMOS
Author :
Verhofstadt, P.
Author_Institution :
Fairchild Semiconductor, Mountain View, CA, USA
Volume :
14
Issue :
6
fYear :
1977
fDate :
6/1/1977 12:00:00 AM
Firstpage :
33
Lastpage :
34
Abstract :
Fairchild has applied dielectric-isolation techniques to I2L and come up with a speed- and density-enhancing version called Isoplanar integrated-injection logic, or I3L. This paper describes this latest development and compares it to the traditional I2L.
Keywords :
integrated logic circuits; dielectric isolation technique; isoplanar integrated injection logic circuit;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/MSPEC.1977.6501494
Filename :
6501494
Link To Document :
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