DocumentCode
1546838
Title
Au metal-induced lateral crystallisation (MILC) of hydrogenated amorphous silicon thin film with very low annealing temperature and fast MILC rate
Author
Lee, K.H. ; Fang, Y.K. ; Fan, S.H.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
35
Issue
13
fYear
1999
fDate
6/24/1999 12:00:00 AM
Firstpage
1108
Lastpage
1109
Abstract
The Au metal-induced lateral crystallisation (Au-MILC) of a-Si:H film has been investigated under various crystallisation conditions. By annealing at 400/spl deg/C for 10 h, the MILC rate induced by Au can be as large as 15.9 /spl mu/m/h which is much faster than that possible with Ni and Pd. Owing to the very low annealing temperature treatment (/spl les/400/spl deg/C), the Au-MILC process represents an important technique for fabricating low cost ICs with poly-Si TFT structure on conventional glass substrate.
Keywords
crystallisation; 10 h; 400 degC; MILC rate; Si:H; amorphous semiconductors; annealing temperature; annealing time; low cost ICs; metal-induced lateral crystallisation; polysilicon TFT structure; semiconductor thin films;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990743
Filename
784558
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