Title :
Metamorphic GaAs HEMTs with f/sub T/ of 200 GHz
Author :
Edgar, D.L. ; Cameron, N.I. ; McLelland, H. ; Holland, M.C. ; Taylor, M.R.S. ; Thayne, I.G. ; Stanley, C.R. ; Beaumont, S.P.
Author_Institution :
Nanometrics Res. Centre, Glasgow Univ., UK
fDate :
6/24/1999 12:00:00 AM
Abstract :
The RF performance of 0.12 /spl mu/m T-gate GaAs based metamorphic HEMTs with composite In/sub 0.53/Ga/sub 0.47/As-In/sub 0.30/Ga/sub 0.70/As channel is reported. 2/spl times/50 /spl mu/m width devices demonstrated an f/sub T/ of 200 GHz, the highest of any three terminal GaAs based device reported to date. In addition, 2/spl times/25 /spl mu/m devices demonstrated 9.0 dB MAG at 94 GHz showing the W-band capability of GaAs based metamorphic HEMTs.
Keywords :
gallium arsenide; 0.12 micron; 200 GHz; 94 GHz; EHF; GaAs based HEMTs; In/sub 0.53/Ga/sub 0.47/As-In/sub 0.30/Ga/sub 0.70/As; MM-wave operation; RF performance; T-gate metamorphic HEMTs; W-band capability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990717
