• DocumentCode
    1546861
  • Title

    A stable programming pulse generator for single power supply flash memories

  • Author

    Tanzawa, Toru ; Tanaka, Tomoharu

  • Author_Institution
    Toshiba R&D Center, Kawasaki, Japan
  • Volume
    32
  • Issue
    6
  • fYear
    1997
  • fDate
    6/1/1997 12:00:00 AM
  • Firstpage
    845
  • Lastpage
    851
  • Abstract
    A stable programming pulse generator has been developed for single power supply, high-speed programming, and low-power flash memories. The newly developed delay circuit operates by amplifying the difference between the reference voltage and the capacitor voltage raised by the charging current which is proportional to the reference voltage. Linearity between the capacitor voltage swing and the driving current enables us to make the delay circuit supply voltage-, temperature-, and process-tolerant. Thus, the proposed delay circuit stably controls a programming pulse width through all operational ranges of supply voltage and temperature. The output frequency of the newly developed oscillator is inversely proportional to the supply voltage. This oscillator stably drives charge pump circuits which generate high programming voltages on chip since dependence of charge pump characteristics on frequency and supply voltage can be cancelled. As a result, the programming pulse generator including the delay circuit and the oscillator has reduced the total programming time under the slowest condition, i.e., high temperature and low voltage condition, by 30% and the power consumption under the fastest condition, i.e., low temperature and high voltage condition, by 20%, for a 3.3 V-only flash memory
  • Keywords
    CMOS analogue integrated circuits; EPROM; circuit stability; delay circuits; driver circuits; oscillators; pulse generators; 0.7 mum; 3.3 V; 5 V; CMOS triple-poly single-metal process; EEPROM; capacitor voltage swing; charge pump circuits; charging current; delay circuit; driving current; high programming voltage generation; high-speed programming low-power flash memories; oscillator; power consumption reduction; process tolerance; programming pulse width control; reference voltage capacitor voltage difference amplification; single power supply flash memories; stable programming pulse generator; temperature tolerance; total programming time reduction; voltage tolerance; Capacitors; Charge pumps; Circuits; Delay; Flash memory; Frequency; Pulse generation; Pulsed power supplies; Voltage; Voltage-controlled oscillators;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.585286
  • Filename
    585286