Title :
An SRAM cell with nonvolatile memory for programmable logic applications
Author :
Wright, P.J. ; Madurawe, R.U.
Author_Institution :
Dept. of Technol., Altera Corp., San Jose, CA, USA
fDate :
6/1/1997 12:00:00 AM
Abstract :
A memory cell has been developed and fabricated that during normal operation acts as an SRAM cell. The state of the cell can be “saved,” and at power up, the cell can be put back into that state
Keywords :
CMOS memory circuits; EPROM; PLD programming; SRAM chips; programmable logic devices; FIFO SRAM cell; memory cell; nonvolatile memory; programmable logic applications; Dielectric devices; EPROM; Inverters; Logic devices; Logic gates; MOS devices; Nonvolatile memory; Programmable logic arrays; Programmable logic devices; Random access memory;
Journal_Title :
Solid-State Circuits, IEEE Journal of
