Improvement of polysilicon oxide by growing on polished polysilicon film

Author

Lei, Tan Fu ; Cheng, Juing-Yi ; Shiau, Shyh Yin ; Chao, Tien Sheng ; Lai, Chao Sung

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

18

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

270

Lastpage

271

Abstract

This letter first reports the characteristics of polyoxide that was thermally grown on polished polysilicon film. Compared to conventional polyoxide, polyoxide grown on polished polysilicon film exhibits lower leakage current, higher dielectric breakdown field, larger effective barrier height, and higher charge-to-breakdown. This simple and well-operated process provides a very promising option for the interpolysilicon oxide.

Keywords

EPROM; dielectric thin films; electric breakdown; leakage currents; oxidation; polishing; semiconductor-insulator-semiconductor devices; silicon compounds; surface topography; EEPROM; EPROM; Si; Si-SiO/sub 2/-Si; charge-to-breakdown; chemical mechanical polishing; dielectric breakdown field; double-poly floating-gate structures; effective barrier height; interpolysilicon oxide; leakage current; polished polysilicon film; polysilicon oxide growth; polysilicon/polyoxide/polysilicon capacitors; surface roughness improvement; thermal growth; Chaos; Dielectric breakdown; EPROM; Leakage current; Oxidation; Rough surfaces; Silicon compounds; Slurries; Surface morphology; Surface roughness;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.585353

Filename

585353