Semiconductor laser model based on moment method solutions of the Boltzmann transport equation

Author

Kurakake, H.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

35

Issue

9

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

1337

Lastpage

1343

Abstract

Semiconductor laser models based on density matrix theory have been frequently reported on and are useful in recognizing stimulation emission. However, most of these models use the two-discrete-level approximation, making it difficult to obtain a detailed description of the carrier distribution. The mechanism of the carrier distribution variations in semiconductor lasers will be discussed from the point of view of the Boltzmann transport equation with the relaxation time approximation, and its effect on laser performance will be demonstrated in this paper

Keywords

Boltzmann equation; laser theory; molecular moments; semiconductor device models; semiconductor lasers; stimulated emission; Boltzmann transport equation; carrier distribution; density matrix theory; laser performance; moment method solutions; relaxation time approximation; semiconductor laser model; stimulation emission; two-discrete-level approximation; Boltzmann equation; Electron devices; Energy conservation; Hot carriers; Laser modes; Laser theory; Moment methods; Particle scattering; Semiconductor lasers; Solid state circuits;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.784595

Filename

784595