Title :
Enhanced Current Spreading for GaN-Based Side-View LEDs by Adding an Metallic Stripe Across the Long Side of the Chip
Author :
Chang, L.M. ; Chang, Shoou-Jinn ; Jiao, Z.Y. ; Shen, C.F. ; Ko, Tsun-Kai ; Hon, S.J. ; Chiou, Yu-Zung ; Chiou, H.Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The authors propose a simple method to enhance current spreading of GaN-based side-view light-emitting diodes (LEDs) by adding a metallic stripe across the long side of the chip. It was found that 20 mA output power of the LED could be enhanced from 8.54 to 9.2 mW by adding the metallic stripe. It was also found that further the LED output power could be enhanced to 9.68 mW by partially thinning down the metallic stripe chemically. These improvements could be attributed to the more uniform current distribution across the LED chip.
Keywords :
III-V semiconductors; integrated optoelectronics; light emitting diodes; wide band gap semiconductors; GaN; LED chip; current 20 mA; current distribution; current spreading; metallic stripe; power 8.54 mW; power 9.2 mW; power 9.68 mW; side-view light-emitting diodes; Gallium nitride; Gold; Light emitting diodes; Power generation; Proximity effects; Resistance; Wires; Current spreading; GaN; metallic wire; side-view LEDs;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2205236
