Title :
Bias dependent microwave performance of AlGaN/GaN MODFET´s up to 100 V
Author :
Wu, Y.-F. ; Keller, S. ; Kozodoy, P. ; Keller, B.P. ; Parikh, P. ; Kapolnek, D. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
6/1/1997 12:00:00 AM
Abstract :
1 μm gate-length AlGaN/GaN modulation doped field effect transistors (MODFET´s) have been fabricated on an insulating GaN buffer layer for better carrier confinement. These devices demonstrate simultaneously high current levels (>500 mA/mm), excellent pinch-off and high gate-drain breakdown voltages (220 V for 3 μm gate-drain spacing). In contrast to their GaAs counterparts, the current-gain cutoff frequency of the AlGaN/GaN devices shows little degradation at high drain voltage biases. A power-gain cutoff frequency of 19 GHz is obtained at 100 V. ACW power density of 1.57 W/mm at 4 Ghz is also achieved when biased at 28 V and 205 mA/mm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; 1 mum; 100 V; 19 GHz; 220 V; 28 V; 3 mum; 4 GHz; ACW power density; AlGaN-GaN; AlGaN/GaN MODFET; GaN; I-V characteristics; bias dependent microwave performance; carrier confinement; current-gain cutoff frequency; high current levels; high gate-drain breakdown voltages; insulating GaN buffer layer; pinch-off; power-gain cutoff frequency; Aluminum gallium nitride; Buffer layers; Cutoff frequency; Epitaxial layers; FETs; Gallium nitride; HEMTs; Insulation; MODFETs; Microwave devices;
Journal_Title :
Electron Device Letters, IEEE
