DocumentCode
1547130
Title
High rate deposition of 5 /spl mu/m thick YBa/sub 2/Cu/sub 3/O/sub 7/ films using the BaF/sub 2/ ex-situ post annealing process
Author
Solovpov, V.F. ; Wiesmann, H.J. ; Li-Jun Wu ; Suenaga, M. ; Feenstra, R.
Author_Institution
Dept. of Appl. Sci., Brookhaven Nat. Lab., Upton, NY, USA
Volume
9
Issue
2
fYear
1999
fDate
6/1/1999 12:00:00 AM
Firstpage
1467
Lastpage
1470
Abstract
We have investigated the crystallization of thick YBCO films under various annealing conditions. The films were deposited by high-rate co-evaporation of Y, Cu and BaF/sub 2/ onto room-temperature SrTiO/sub 3/ substrates at rates exceeding 10 nm/s. TEM microscopy was performed to establish the microscopic structure of partially processed films and help elucidate the growth mechanism. In-situ resistivity measurements were used to monitor the crystallization of the YBCO films during the annealing process. Resistivity measurements and TEM microscopy of samples at different stages of the film growth are compared. Our results indicate that, in addition to oxygen partial pressure, water vapor pressure is an important parameter which defines the dynamics of film growth and crystallization. 5 /spl mu/m thick films with J/sub c/>2/spl times/10/sup 5/ A/cm/sup 2/ (1 T H/spl par/c) have been fabricated.
Keywords
annealing; barium compounds; crystal microstructure; crystallisation; high-temperature superconductors; superconducting thin films; transmission electron microscopy; vacuum deposited coatings; yttrium compounds; 5 mum; BaF/sub 2/; BaF/sub 2/ ex-situ post annealing process; TEM microscopy; YBa/sub 2/Cu/sub 3/O/sub 7/; YBa/sub 2/Cu/sub 3/O/sub 7/ films; crystallization; high rate deposition; high temperature superconductor; high-rate co-evaporation; microscopic structure; Annealing; Atmosphere; Conductivity measurement; Critical current; Crystallization; Laboratories; Substrates; Superconducting films; Transmission electron microscopy; Yttrium barium copper oxide;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/77.784669
Filename
784669
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