Simultaneous double-sided deposition of HTS films on 3-inch wafers by ICM-sputtering

Author

Geerk, J. ; Ratzel, F. ; Rietschel, H. ; Linker, G. ; Heidinger, R. ; Schwab, R.

Author_Institution

Forschungszentrum Karlsruhe GmbH, Germany

Volume

9

Issue

2

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

1543

Lastpage

1546

Abstract

The construction of a system which allows simultaneous deposition of HTS films on both sides of 3-inch wafers is described. The wafers are placed in a heating cavity which can be heated to 1000/spl deg/C. Deposition is accomplished through two opposite holes in the cavity by inverted cylindrical magnetron (ICM) sputtering guns. YBaCuO films deposited on 3 inch CeO/sub 2/ buffered sapphire substrates revealed a growth quality and T/sub c/ and j/sub c/ values comparable to standard films with sufficient uniformity on both sides of the wafer. The surface resistance of the films measured in the frequency range of 2.68 to 145 GHz is 20 m/spl Omega/ at the highest frequency.

Keywords

barium compounds; critical current density (superconductivity); high-temperature superconductors; sputtered coatings; superconducting thin films; superconducting transition temperature; yttrium compounds; 1000 C; 2.68 to 145 GHz; 20 mohm; 3 in; 3-inch wafers; CeO/sub 2/; ICM-sputtering; YBaCuO; YBaCuO films; high temperature superconductor; inverted cylindrical magnetron sputtering; simultaneous double-sided deposition; surface resistance; Guns; Heating; High temperature superconductors; Plasma temperature; Sputtering; Substrates; Superconducting films; Superconducting magnets; Temperature distribution; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.784688

Filename

784688