A MOSFET-only continuous-time bandpass filter

Author

Huang, Qiuting

Author_Institution

Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

32

Issue

2

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

147

Lastpage

158

Abstract

A MOSFET-only filter is described which employs an amplifier-regulated cascode structure to realize both conductance and transconductance, while the required capacitors are realized by MOSFET gate capacitance. Distortion due to mobility degradation and MOSFET capacitor nonlinearity is analyzed, as is the effect of finite gain-bandwidth product of the regulating amplifiers on the filter´s linearity and high frequency performance. A prototype second-order bandpass filter has a center frequency of 560 kHz, a third-order intermodulation of -41 dB for 0 dBm input and a dynamic range of 60 dB. It consumes 2.5 mW from a 5 V supply and occupies 0.18 mm² in a 1-μm digital CMOS technology

Keywords

MOSFET circuits; band-pass filters; continuous time filters; harmonic distortion; 2.5 mW; 5 V; 560 kHz; MOSFET gate capacitance; MOSFET-only continuous-time bandpass filter; amplifier-regulated cascode structure; conductance; digital CMOS technology; gain-bandwidth product; high frequency characteristics; intermodulation; linearity; mobility; nonlinear distortion; transconductance; Band pass filters; CMOS technology; Capacitance; Capacitors; Degradation; Frequency; Linearity; MOSFET circuits; Performance analysis; Transconductance;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.551906

Filename

551906