Title :
The design of a 3-V 900-MHz CMOS bandpass amplifier
Author :
Wu, Chung-Yu ; Hsiao, Shuo-Yuan
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
2/1/1997 12:00:00 AM
Abstract :
A new bandpass amplifier which performs both functions of low-noise amplifier (LNA) and bandpass filter (BPF) is proposed for the application of 900-MHz RF front-end in wireless receivers. In the proposed amplifier, the positive-feedback Q-enhancement technique is used to overcome the low-gain low-Q characteristics of the CMOS tuned amplifier. The Miller-capacitance tuning scheme is used to compensate for the process variations of center frequency. Using the high-Q bandpass amplifier in the receivers, the conventional bulky off-chip filter is not required. An experimental chip fabricated by 0.8-μm N-well double-poly-double-metal CMOS technology occupies 2.6×2.0 mm2 chip area. Under a 3 V supply voltage, the measured quality factor is tunable between 2.2 and 44. When the quality factor is tuned at Q=30, the measured center frequency of the amplifier is tunable between 869-893 MHz with power gain 17 dB, noise figure 6.0 dB, output 1 dB compression point at -30 dBm, third-order input intercept point at -14 dBm, and power dissipation 78 mW
Keywords :
CMOS analogue integrated circuits; Q-factor; UHF amplifiers; UHF integrated circuits; band-pass filters; circuit tuning; compensation; feedback amplifiers; integrated circuit design; land mobile radio; radio receivers; 0.8 micron; 17 dB; 3 V; 6 dB; 78 mW; 869 to 893 MHz; 900 MHz; CMOS bandpass amplifier; LNA; Miller-capacitance tuning scheme; N-well CMOS technology; RF front-end; UHF IC; bandpass filter; low-noise amplifier; positive-feedback Q-enhancement technique; wireless receivers; Band pass filters; CMOS technology; Low-noise amplifiers; Power measurement; Q factor; Radio frequency; Radiofrequency amplifiers; Semiconductor device measurement; Tuning; Voltage measurement;
Journal_Title :
Solid-State Circuits, IEEE Journal of
