Title :
High-power single-mode operation in DFB and FP lasers using diffused quantum-well structure
Author :
Yu, S.F. ; Lo, C.W. ; Li, E. Herbert
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
fDate :
6/1/1997 12:00:00 AM
Abstract :
Distributed feedback (DFB) and Fabry-Perot (FP) semiconductor lasers with step and periodic interdiffusion quantum-well structures are proposed for high-power single-longitudinal-mode operation. It is shown that the phase-adjustment region formed by the diffusion step (i.e., step change in optical gain and refractive index) counteracts the influence of spatial hole burning, especially for DFB lasers with large coupling-length products biased at high injection current. Furthermore, it is found that with careful design of the diffusion grating (i.e., grating period and amount of diffusion extent) of FP lasers, side-mode suppression ratio can be enhanced and threshold current density can be minimized to a satisfied level
Keywords :
Fabry-Perot resonators; chemical interdiffusion; diffusion; distributed feedback lasers; laser cavity resonators; laser modes; laser theory; optical hole burning; quantum well lasers; refractive index; semiconductor device models; DFB lasers; FP lasers; Fabry-Perot semiconductor lasers; QW lasers; diffused quantum-well structure; diffusion extent; diffusion grating; diffusion step; grating period; high injection current; high-power single-longitudinal-mode operation; high-power single-mode operation; large coupling-length product; optical gain; periodic interdiffusion quantum-well structure; phase-adjustment region; refractive index; side-mode suppression ratio; spatial hole burning; step interdiffusion quantum-well structure; threshold current density; Distributed feedback devices; Fabry-Perot; Gratings; Laser feedback; Optical feedback; Optical refraction; Optical variables control; Periodic structures; Quantum well lasers; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of