DocumentCode :
1547389
Title :
Flash memory cells-an overview
Author :
Pavan, Paolo ; Bez, Roberto ; Olivo, Piero ; Zanoni, Enrico
Author_Institution :
Dipt. di Sci. dell´´Ingegneria, Modena Univ., Italy
Volume :
85
Issue :
8
fYear :
1997
fDate :
8/1/1997 12:00:00 AM
Firstpage :
1248
Lastpage :
1271
Abstract :
The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and charge-injection mechanisms that are most commonly used in actual flash memory cells are reviewed to provide an understanding of the underlying physics and principles in order to appreciate the large number of device structures, processing technologies, and circuit designs presented in the literature. New cell structures and architectural solutions have been surveyed to highlight the evolution of the flash memory technology, oriented to both reducing cell size and upgrading product functions. The subject is of extreme interest: new concepts involving new materials, structures, principles, or applications are being continuously introduced. The worldwide semiconductor memory market seems ready to accept many new applications in fields that are not specific to traditional nonvolatile memories
Keywords :
EPROM; integrated circuit reliability; integrated memory circuits; memory architecture; reviews; NVM; architectural solutions; cell size reduction; cell structures; charge-injection mechanisms; circuit designs; device structures; flash memory cells; memory technology; nonvolatile memories; processing technologies; review; semiconductor memory; Application software; Economic forecasting; Flash memory; Flash memory cells; Hard disks; Nonvolatile memory; PROM; Power supplies; Random access memory; Semiconductor memory;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/5.622505
Filename :
622505
Link To Document :
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