Title :
Extrinsic base optimization for high-performance RF SiGe heterojunction bipolar transistors
Author :
Tang, R. ; Ford, J. ; Pryor, B. ; Anandakugan, S. ; Welch, P. ; Burt, C.
Author_Institution :
Commun. Products Lab., Motorola Inc., Mesa, AZ, USA
Abstract :
A comprehensive study on the effect of extrinsic base optimization on the RF performance of an advanced SiGe HBT is presented. An optimized extrinsic poly base with its interface to the epi-base passivated by boron ions is demonstrated to enhance the fmax and the current gain almost two times and to reduce the low-frequency 1/f noise ten times and noise figure (NF) 0.5 dB, achieving fmax of 45 GHz, 1/f noise corner frequency of 700 Hz at I/sub B/=1.0 μA, NF/spl les/1.0 dB at 900 MHz. Early voltage V/sub A/ of /spl ges/200 V is achieved, while maintaining a BV/sub CEO/ of /spl ges/8.0 V.
Keywords :
1/f noise; Ge-Si alloys; UHF bipolar transistors; heterojunction bipolar transistors; optimisation; passivation; semiconductor device noise; semiconductor materials; 0.5 dB; 1 dB; 45 GHz; 900 MHz; B ions; RF performance; SiGe; SiGe HBT; UHF device; extrinsic base optimization; extrinsic polysilicon base; heterojunction bipolar transistors; passivated epi-base; Boron; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise figure; Noise measurement; Noise reduction; Radio frequency; Silicon germanium; Voltage;
Journal_Title :
Electron Device Letters, IEEE
