Epitaxial growth of YBCO thin films on Al/sub 2/O/sub 3/ substrates by pulsed laser deposition

Author

In-Seon Kim ; Hae-Ryong Lim ; Yong Ki Park

Author_Institution

Quantum Metrol. Div., Korea Res. Inst. of Stand. & Sci., Taejon, South Korea

Volume

9

Issue

2

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

1649

Lastpage

1652

Abstract

Superconducting YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) thin films were deposited on CeO/sub 2/ buffered Al/sub 2/O/sub 3/ (alumina and sapphire) substrates by pulsed laser deposition. Superconducting properties of the c-axis YBCO films on these substrates were greatly affected by the growth orientation of CeO/sub 2/ buffer layer. The critical temperature of YBCO film on alumina substrate was /spl sim/83 K. In the case of single crystal substrates, the critical temperature of YBCO thin film was /spl sim/89.5 K, and the critical current density was 1.5/spl times/10/sup 6/ A/cm/sup 2/ at 77 K.

Keywords

alumina; barium compounds; critical current density (superconductivity); high-temperature superconductors; pulsed laser deposition; sapphire; substrates; superconducting transition temperature; vapour phase epitaxial growth; yttrium compounds; 77 K; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ substrates; CeO/sub 2/; CeO/sub 2/ buffered Al/sub 2/O/sub 3/; HTSC; YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta//; YBaCuO; YBaCuO thin films; alumina; c-axis YBCO films; critical current density; critical temperature; epitaxial growth; growth orientation; pulsed laser deposition; sapphire; single crystal substrates; superconducting properties; Epitaxial growth; Pulsed laser deposition; Sputtering; Substrates; Superconducting epitaxial layers; Superconducting films; Superconducting thin films; Temperature; Transistors; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.784748

Filename

784748