Preparation of a-axis oriented YBCO film on CeO/sub 2/ buffered sapphire substrate

Author

You-Song Jiang ; Kobayashi, T. ; Goto, T.

Author_Institution

Univ. of Electro-Commun., Chofu, Japan

Volume

9

Issue

2

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

1657

Lastpage

1660

Abstract

The purpose of this research is to control the orientations of the YBCO thin films which were deposited on the sapphire substrate with CeO/sub 2/ buffer layer that was fabricated using ion beam sputtering (IBS) method. The orientations of YBCO thin films were investigated using X-ray diffraction, and the dependence of the degree of a-axis orientation upon the substrate temperature and deposition rate was found. The a-axis oriented YBCO thin films were obtained at substrate temperature below 610/spl deg/C and deposition rate of more than 10 /spl Aring//min. High Tc of 85 K was realized by "temperature gradient" method. The surface of YBCO thin film is characterized by atomic force microscopy (AFM).

Keywords

X-ray diffraction; atomic force microscopy; barium compounds; high-temperature superconductors; sapphire; sputter deposition; substrates; superconducting thin films; superconducting transition temperature; yttrium compounds; Al/sub 2/O/sub 3/; CeO/sub 2/; CeO/sub 2/ buffered sapphire substrate; HTSC; X-ray diffraction; YBaCuO; a-axis orientation; a-axis oriented YBaCuO film; atomic force microscopy; deposition rate; ion beam sputtering; orientation control; preparation; substrate temperature; temperature gradient method; transition temperature; Atomic force microscopy; Atomic layer deposition; Buffer layers; Ion beams; Sputtering; Substrates; Temperature dependence; Transistors; X-ray diffraction; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.784750

Filename

784750