• DocumentCode
    1547516
  • Title

    Fabrication and characterization of Si-MOSFET´s with PECVD amorphous Ta2O5 gate insulator

  • Author

    Autran, Jean-Luc ; Devine, Roderick ; Chaneliere, Christophe ; Balland, Bernard

  • Author_Institution
    Lab. de Phys. de la Matiere, Inst. Nat. des Sci. Appliquees, Villeurbanne, France
  • Volume
    18
  • Issue
    9
  • fYear
    1997
  • Firstpage
    447
  • Lastpage
    449
  • Abstract
    Silicon MOS transistors having amorphous Ta/sub 2/O/sub 5/ insulator gates have been fabricated. The Ta/sub 2/O/sub 5/ films were deposited using a low pressure (a few mtorr) plasma-enhanced CVD process in a microwave (2.45 GHz) excited electron cyclotron resonance reactor. The source gas was TaF/sub 5/. Electrical characteristics of p-channel Al gate transistors are presented.
  • Keywords
    MOSFET; amorphous state; elemental semiconductors; insulating thin films; plasma CVD; plasma CVD coatings; silicon; tantalum compounds; 2.45 GHz; Al-Ta/sub 2/O/sub 5/-Si; MOS transistors; PECVD amorphous gate insulator; Si MOSFET; Ta/sub 2/O/sub 5/ films; Ta/sub 2/O/sub 5/ gate insulator; TaF/sub 5/ gas source; characterization; electrical characteristics; fabrication; microwave excited ECR reactor; p-channel Al gate transistors; plasma-enhanced CVD process; Amorphous materials; Cyclotrons; Electrons; Fabrication; Insulation; MOSFETs; Plasma properties; Plasma sources; Resonance; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.622525
  • Filename
    622525
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1547516