Title :
K-band and high-power/efficiency/breakdown GaInAs/InP composite channel HEMTs
Author :
Shealy, J.B. ; Matloubian, M. ; Liu, T. ; Virk, R. ; Pusl, J. ; Ngo, C.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
The authors report the power performance of Ga/sub 0.47/In/sub 0.53/As/InP composite channel InP HEMT´s at 18 GHz. Devices with 0.15-μm gatelength exhibit a peak transconductance of 720 mS/mm and full channel current of 500 mA/mm while achieving a two-terminal (three-terminal) breakdown voltage of 13.3 V (10.4 V) at 1 mA/mm. Devices with 450-μm gatewidth exhibit 0.75-W/mm output power with 53% power-added efficiency (PAE) and 11.9-dB gain. The highest efficiency achieved was 57% at 5.0 V (V/sub ds/) for 600-μm-wide devices producing an output power density of 0.5 W/mm. Further, devices with 900-μm gatewidth exhibit 0.59-W/mm output power with 53% PAE and 10.5-dB gain.
Keywords :
III-V semiconductors; electric breakdown; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; 0.15 micron; 10.4 V; 10.5 to 11.9 dB; 13.3 V; 18 GHz; 450 to 900 micron; 53 to 57 percent; 720 mS/mm; Ga/sub 0.47/In/sub 0.53/As-InP; GaInAs/InP composite channel HEMT; K-band; SHF; high breakdown device; high-efficiency operation; power performance; three-terminal breakdown voltage; two-terminal breakdown voltage; Composite materials; Current measurement; Electric breakdown; HEMTs; Indium phosphide; K-band; Molecular beam epitaxial growth; Ohmic contacts; Power generation; Transconductance;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
