Title :
The Pospieszalski noise model and the imaginary part of the optimum noise source impedance of extrinsic or packaged FET´s
Author :
Boglione, Luciano ; Pollard, Roger D. ; Postoyalko, Vasil
Author_Institution :
Sch. of Electron. & Electr. Eng., Leeds Univ., UK
fDate :
9/1/1997 12:00:00 AM
Abstract :
The imaginary part X(Sopt) of the optimum noise impedance for extrinsic or packaged devices is investigated. The analysis modifies the well-known Pospieszalski noise model by applying a series feedback to the source port. A simple expression for X(Sopt ) is developed and is verified for extrinsic and packaged devices with a decreasing level of accuracy. The results give further insights into the way the parasitic inductors Lg and Ls affect the noise performance of the transistor and can help to design low-noise amplifier with simultaneous signal and noise power match at the input port
Keywords :
electric impedance; equivalent circuits; field effect transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; Pospieszalski noise model; extrinsic FET; optimum noise source impedance; packaged FET; parasitic inductors; transistor noise performance; Circuit noise; Feedback circuits; Frequency; Impedance; Inductors; Microwave FETs; Microwave amplifiers; Packaging; Semiconductor device noise; Semiconductor optical amplifiers;
Journal_Title :
Microwave and Guided Wave Letters, IEEE