• DocumentCode
    1547650
  • Title

    Oxide epitaxial lift-off of superconducting thin film devices

  • Author

    Hanson, R.K. ; Eddy, M.M.

  • Author_Institution
    Superconductor Technol. Inc., Santa Barbara, CA, USA
  • Volume
    9
  • Issue
    2
  • fYear
    1999
  • fDate
    6/1/1999 12:00:00 AM
  • Firstpage
    1700
  • Lastpage
    1703
  • Abstract
    Oxide epitaxial lift-off (OELO) has been successfully accomplished for thin single layer films of strontium titanate and multilayer films of strontium titanate and superconducting yttrium barium copper oxide (YBCO). The technique employs a YBCO release layer to separate the films from the growth substrate. The critical development was the use of a polymer support layer which retains sufficient compliance after curing to permit stress relaxation of the oxide film in such a way as to prevent cracking. Multilayer lift-off had the additional necessity of encapsulating the YBCO device layer. This was accomplished by alternately depositing layers of strontium titanate and YBCO. Layer thicknesses were optimized to compensate for the resulting through-thickness stress gradient which developed due to thermal expansion differences.
  • Keywords
    barium compounds; high-temperature superconductors; strontium compounds; superconducting epitaxial layers; yttrium compounds; SrTiO/sub 3/; YBCO device layer; YBCO release layer; YBa/sub 2/Cu/sub 3/O/sub 7/-SrTiO/sub 3/; curing; growth substrate; high temperature superconductor; multilayer films; oxide epitaxial lift-off; polymer support layer; stress relaxation; superconducting thin film devices; thermal expansion; thickness stress gradient; Nonhomogeneous media; Polymer films; Strontium; Substrates; Superconducting epitaxial layers; Superconducting films; Superconducting thin films; Thermal stresses; Titanium compounds; Yttrium barium copper oxide;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/77.784780
  • Filename
    784780