12 GHz clocked operation of ultralow power interband resonant tunneling diode pipelined logic gates

Author

Williamson, William, III ; Enquist, Steven B. ; Chow, David H. ; Dunlap, Howard L. ; Subramaniam, Suresh ; Lei, Peiming ; Bernstein, Gary H. ; Gilbert, Barry K.

Author_Institution

Special Purpose Process. Dev. Group, Mayo Found., Rochester, MN, USA

Volume

32

Issue

2

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

222

Lastpage

231

Abstract

We report on the successful demonstration of a functionally complete set of logic gates based on resonant interband tunneling diodes (RITDs) with a maximum operating frequency in excess of 12 GHz. At this high frequency of operation, the power dissipation is remarkably low-on the order of 0.5 mW per gate. The circuits for all gates, AND, OR, XOR, and INV, shared the same layout geometry, consisting of two Schottky diodes and three RITDs. Logical functionality was determined solely by varying the relative areas of the devices

Keywords

Schottky diodes; integrated logic circuits; logic circuits; logic gates; resonant tunnelling diodes; timing; 0.5 mW; 12 GHz; AND gate; INV gate; OR gate; RITD; RTD pipelined logic gates; Schottky diodes; XOR gate; clocked operation; layout geometry; monolithic integration; power dissipation; resonant tunneling diode logic gates; ultralow power interband RTD gates; Clocks; Frequency; Integrated circuit technology; Logic devices; Logic gates; RLC circuits; Resonance; Resonant tunneling devices; Schottky diodes; Semiconductor diodes;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.551914

Filename

551914