Title :
SiC device edge termination using finite area argon implantation
Author :
Alok, Dev ; Baliga, B.Jayant
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
fDate :
6/1/1997 12:00:00 AM
Abstract :
In this paper, the results obtained with limited area amorphization by argon ion-implantation at the periphery of 6H-SiC Schottky barrier diodes are reported. It is demonstrated that only 50 μm of implant region is required at the periphery to obtain ideal plane parallel breakdown voltages. The leakage current at small reverse bias voltages was found to be directly proportional to the implant area
Keywords :
Schottky diodes; amorphisation; argon; electric breakdown; ion implantation; leakage currents; silicon compounds; wide band gap semiconductors; 6H-SiC Schottky barrier diodes; Ar; SiC; device edge termination; finite area argon implantation; ideal plane parallel breakdown voltages; leakage current; limited area amorphization; reverse bias voltages; Argon; Conductivity; Implants; Leakage current; Numerical simulation; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
