Title :
Transient behavior of adjustable threshold a-Si:H/a-SiC:H three-color detector
Author :
Irrera, Fernanda ; Lemmi, Francesco ; Palma, Fabrizio
Author_Institution :
Dipartimento di Ingegneria Elettronica, Rome Univ., Italy
fDate :
9/1/1997 12:00:00 AM
Abstract :
In this paper, we investigate the transient behavior of a-Si:H/a-SiC:H adjustable-threshold three-color detectors (ATCDs) for applications in bidimensional large area image sensors. Red, green, and blue color sensing in the charge integration regime is demonstrated, and the transient mechanisms of charge and discharge of the equivalent capacitance are discussed by means of load curve diagrams. The possibility of driving 2-D arrays of ATCDs is discussed by means of a test circuit simulating the row select TFT and the data line capacitance by discrete components. Readout times on the microsecond timescale and saturation times three orders of magnitude greater have been obtained under 0.1 mW/cm2 illumination, resulting in the possibility of scanning 1000 rows. Finally, an equivalent circuit is introduced and solved by AIM-SPICE, and simulations of the static and dynamic behavior are presented
Keywords :
amorphous semiconductors; capacitance; elemental semiconductors; equivalent circuits; hydrogen; image sensors; photodetectors; semiconductor materials; silicon; silicon compounds; thin film transistors; transient analysis; 2D arrays; AIM-SPICE; Si:H-SiC:H; adjustable-threshold three-color detectors; bidimensional large area image sensors; charge integration regime; data line capacitance; dynamic behavior; equivalent capacitance; equivalent circuit; load curve diagrams; readout times; row select TFT; saturation times; static behavior; transient behavior; Amorphous silicon; Capacitance; Circuit simulation; Circuit testing; Detectors; Image sensors; Photonic band gap; Sensor arrays; Steady-state; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
