Title :
Effects of fluorine implants on induced charge components in gate-oxides under constant-current Fowler-Nordheim stress
Author :
Nguyen, Tan Khai ; Landsberger, Les M. ; Jean, Claude ; Logiudice, Vito
Author_Institution :
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada
fDate :
9/1/1997 12:00:00 AM
Abstract :
Charge defects in MOS capacitors formed with fluorine-incorporated oxides are analyzed by Fowler-Nordheim (F-N) tunnelling injection stress. Like previous studies, fluorinated gate oxides prove to have better performance in aspects of overall flatband voltage shifts and interface trapped charge density. However, these advantages result from more complex combinations of effects. In this study, comparisons of induced charging components between fluorinated and control oxides expose complicated variations of trapped charge generation in both bulk and interface regions. A relationship is found between the amount of fluorine at/near the Si/SiO2 interface and induced charges in the bulk
Keywords :
MOS capacitors; electron traps; elemental semiconductors; internal stresses; silicon; silicon compounds; tunnelling; MOS capacitors; Si-SiO2; constant-current Fowler-Nordheim stress; gate-oxides; induced charge components; interface trapped charge density; overall flatband voltage shifts; trapped charge generation; Electrons; Implants; Interface states; Ionizing radiation; MOS capacitors; Microelectronics; Resistance; Stress; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
