Experimentally-based analytical model of deep-submicron LDD pMOSFETs in a Bi-MOS hybrid-mode environment

Author

Rofail, Samir S. ; Seng, Yeo Kiat

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

Volume

44

Issue

9

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

1473

Lastpage

1482

Abstract

The hybrid-mode operation of deep-submicron LDD pMOSPETs has been investigated experimentally. Based on the experimental results, analytical models for the threshold voltage, the device currents, the transconductance, and the output conductance were derived. The various current components in this mode of operation were extracted and identified. The effects of independently biasing the source, drain, gate, and body potentials on the device currents and parameters were examined. The body-induced-barrier-lowering (BIBL) effect, which is one of the V_SB effects and introduced for the first time, has been used to account for the changes in both the threshold voltage and the device currents caused by the forward source-body bias

Keywords

BIMOS integrated circuits; MOSFET; integrated circuit measurement; integrated circuit modelling; semiconductor device models; Bi-MOS hybrid-mode environment; analytical models; body potentials; body-induced-barrier-lowering effect; deep-submicron LDD pMOSFETs; device currents; forward source-body bias; output conductance; threshold voltage; transconductance; Analytical models; Current density; Equations; MOS devices; MOSFET circuits; Permittivity; Silicon; Space charge; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.622604

Filename

622604