Title :
Experimentally-based analytical model of deep-submicron LDD pMOSFETs in a Bi-MOS hybrid-mode environment
Author :
Rofail, Samir S. ; Seng, Yeo Kiat
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
9/1/1997 12:00:00 AM
Abstract :
The hybrid-mode operation of deep-submicron LDD pMOSPETs has been investigated experimentally. Based on the experimental results, analytical models for the threshold voltage, the device currents, the transconductance, and the output conductance were derived. The various current components in this mode of operation were extracted and identified. The effects of independently biasing the source, drain, gate, and body potentials on the device currents and parameters were examined. The body-induced-barrier-lowering (BIBL) effect, which is one of the VSB effects and introduced for the first time, has been used to account for the changes in both the threshold voltage and the device currents caused by the forward source-body bias
Keywords :
BIMOS integrated circuits; MOSFET; integrated circuit measurement; integrated circuit modelling; semiconductor device models; Bi-MOS hybrid-mode environment; analytical models; body potentials; body-induced-barrier-lowering effect; deep-submicron LDD pMOSFETs; device currents; forward source-body bias; output conductance; threshold voltage; transconductance; Analytical models; Current density; Equations; MOS devices; MOSFET circuits; Permittivity; Silicon; Space charge; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
