DocumentCode :
1548199
Title :
Performance of GaAs microbridge thermocouple infrared detectors
Author :
Chong, Nui ; Srinivas, Tadigadapa A S ; Ahmed, Haroon
Author_Institution :
Dept. of Phys., Cambridge Univ., UK
Volume :
6
Issue :
2
fYear :
1997
fDate :
6/1/1997 12:00:00 AM
Firstpage :
136
Lastpage :
141
Abstract :
GaAs microbridge thermocouples with lengths ranging from 40 to 650 μm and operating at room temperature have been fabricated for the detection of infrared radiation. A CO2 laser of a 10.6 μm wavelength was used to characterize the performance of the detectors in air and in vacuum. A responsivity of 4.2 V/W with a corresponding detectivity D*=8×106 cm Hz1/2/W and a time constant of 2.2 ms have been measured in vacuum for 650-μm-long bridges, and a shorter time constant of 50 μs was obtained for 40-μm-long bridges. An analytic thermal transport model has been used to simulate the operation of the sensors. The heat-transfer coefficient has been evaluated by comparing the data from air and vacuum measurements. The spectral response and the absorbance of the microbridge have also been presented
Keywords :
III-V semiconductors; bridge instruments; gallium arsenide; infrared detectors; microsensors; thermocouples; 10.6 micron; 2.2 ms to 50 mus; 40 to 650 micron; CO2 laser; GaAs; GaAs microbridge thermocouple infrared detector; absorbance; detectivity; heat transfer coefficient; responsivity; spectral response; thermal transport model; time constant; Bonding; Bridge circuits; Etching; Gallium arsenide; Gold; Infrared detectors; Silicon; Temperature sensors; Thermal sensors; Thermoelectricity;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/84.585791
Filename :
585791
Link To Document :
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