Variational formulation of Poisson´s equation in semiconductor at quasi-equilibrium and its applications

Author

Lee, Chang-Yeol ; Lee, Kwyro ; Kim, Choong-ki ; Kim, Moon-Uhn

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

44

Issue

9

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

1507

Lastpage

1513

Abstract

Variational formulation of Poisson´s equation with Boltzmann carrier statistics at quasi-equilibrium is used to find analytical solutions of the potential distribution in multidimensional semiconductor devices with reasonably good accuracy. To demonstrate this approach, short-channel effects in the threshold voltage of fully-depleted SOI MOSFETs are analyzed. The usefulness of our idea is extended further to determine the quasi-Fermi potential of the floating gate of an EEPROM device, which has been determined to be very difficult to find by conventional methods

Keywords

Boltzmann equation; EPROM; MOS memory circuits; MOSFET; semiconductor device models; silicon-on-insulator; variational techniques; Boltzmann carrier statistics; EEPROM device; Poisson´s equation; floating gate; fully-depleted SOI MOSFETs; multidimensional semiconductor devices; potential distribution; quasi-Fermi potential; quasi-equilibrium; short-channel effects; threshold voltage; variational formulation; Capacitance; Closed-form solution; EPROM; Multidimensional systems; Partial differential equations; Poisson equations; Semiconductor devices; Statistical analysis; Statistical distributions; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.622608

Filename

622608