Title :
A new approach to extract the threshold voltage of MOSFETs
Author :
Ortiz-Conde, Adelmo ; Fernandes, Emanuel D Gouveia ; Liou, J.J. ; Hassan, Md Rofiqul ; García-Sánchez, Francisco J. ; De Mercato, Giovanni ; Wong, Waisum
Author_Institution :
Dept. de Electron., Simon Bolivar Univ., Caracas, Venezuela
fDate :
9/1/1997 12:00:00 AM
Abstract :
A new method is presented to extract the threshold voltage of MOSFETs. It is developed based on an integral function which is insensitive to the drain and source series resistances of the MOSFETs. The method is tested in the environments of circuit simulator (SPICE), device simulation (MEDICI), and measurements
Keywords :
MOSFET; SPICE; circuit analysis computing; semiconductor device models; MEDICI; MOSFETs; SPICE; circuit simulation; device simulation; integral function; semiconductor device measurements; series resistances; threshold voltage extraction; Circuit simulation; Circuit testing; Electrical resistance measurement; Filters; MOSFET circuits; Medical simulation; Medical tests; SPICE; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
