DocumentCode
1548229
Title
Simplified method to calculate the band bending and the subband energies in MOS capacitors
Author
Mueller, H. Hartmut ; Schulz, Max J.
Author_Institution
Inst. of Appl. Phys., Erlangen-Nurnberg Univ., Germany
Volume
44
Issue
9
fYear
1997
fDate
9/1/1997 12:00:00 AM
Firstpage
1539
Lastpage
1543
Abstract
A simplified method is introduced to calculate the band bending, the charge densities, and the quantum mechanical fingerprint of the metal-oxide-semiconductor (MOS) capacitor in depletion and inversion. The model features self-consistency of the main quantum mechanical parameters of the system with a low numerical effort in the computation. Example computations are presented, the results of which are close to those obtained from much more complicated, fully self-consistent calculations
Keywords
MOS capacitors; Schrodinger equation; interface states; inversion layers; space-charge-limited conduction; MOS capacitors; band bending; charge densities; quantum mechanical fingerprint; quantum mechanical parameters; self-consistency; subband energies; FETs; Fingerprint recognition; Helium; MOS capacitors; Mutual coupling; Physics; Poisson equations; Quantum computing; Quantum mechanics; Space charge;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.622612
Filename
622612
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