Title :
Simplified method to calculate the band bending and the subband energies in MOS capacitors
Author :
Mueller, H. Hartmut ; Schulz, Max J.
Author_Institution :
Inst. of Appl. Phys., Erlangen-Nurnberg Univ., Germany
fDate :
9/1/1997 12:00:00 AM
Abstract :
A simplified method is introduced to calculate the band bending, the charge densities, and the quantum mechanical fingerprint of the metal-oxide-semiconductor (MOS) capacitor in depletion and inversion. The model features self-consistency of the main quantum mechanical parameters of the system with a low numerical effort in the computation. Example computations are presented, the results of which are close to those obtained from much more complicated, fully self-consistent calculations
Keywords :
MOS capacitors; Schrodinger equation; interface states; inversion layers; space-charge-limited conduction; MOS capacitors; band bending; charge densities; quantum mechanical fingerprint; quantum mechanical parameters; self-consistency; subband energies; FETs; Fingerprint recognition; Helium; MOS capacitors; Mutual coupling; Physics; Poisson equations; Quantum computing; Quantum mechanics; Space charge;
Journal_Title :
Electron Devices, IEEE Transactions on
