DocumentCode
1548241
Title
Extraction of oxide thickness from harmonic distortion of displacement currents in MOS capacitors
Author
Riccò, B. ; Tondi, G. ; Lanzoni, M.
Author_Institution
Dipartimento di Elettronica Inf. e Sistemistica, Bologna Univ., Italy
Volume
44
Issue
9
fYear
1997
fDate
9/1/1997 12:00:00 AM
Firstpage
1552
Lastpage
1554
Abstract
This brief presents a new experimental technique to determine the thickness of (thin) insulator films from the analysis of the harmonic distortion of the displacement current due to the nonlinearity of the C-V characteristics of MOS capacitors. Such a method substantially improves the state of the art, as it overcomes the noise problem affecting a previous technique, particularly suitable for thin insulators since it operates in the virtual absence of tunneling current and other complex phenomena
Keywords
MOS capacitors; current fluctuations; harmonic distortion; insulating thin films; spectral analysis; C-V characteristic nonlinearity; MOS capacitors; displacement currents; harmonic distortion; insulator films; oxide thickness; Capacitance; Current measurement; Harmonic analysis; Harmonic distortion; Insulation; Length measurement; MOS capacitors; Power harmonic filters; Sufficient conditions; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.622614
Filename
622614
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