• DocumentCode
    1548258
  • Title

    Base transit time of the bipolar transistor in quasi-saturation

  • Author

    Dai, Y. ; Yuan, J.S.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
  • Volume
    44
  • Issue
    9
  • fYear
    1997
  • fDate
    9/1/1997 12:00:00 AM
  • Firstpage
    1558
  • Lastpage
    1560
  • Abstract
    The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The base transit time increases with quasi-saturation effect and reaches the maximum when the bipolar transistor is in hard saturation
  • Keywords
    bipolar transistors; equivalent circuits; semiconductor device models; base transit time; bipolar transistor; cutoff frequency; hard saturation; quasi-saturation mode; transistor models; Bipolar transistors; Current density; Cutoff frequency; Degradation; Delay effects; Integrated circuit interconnections; Power supplies; Semiconductor device modeling; Solid state circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.622617
  • Filename
    622617
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1548258