Title :
Rapid thermal annealing on the characteristics of polysilicon thin-film transistors in practical TFT SRAM process
Author :
Lee, Kan Yuan ; Yean Kuen Pang ; Chen, Chii-Wen ; Liang, Mong Song ; Wuu, Shou Gwo
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
9/1/1997 12:00:00 AM
Abstract :
In the practical thin-film transistor (TFT) SRAM process, the rapid thermal contact annealing (RTA) would seriously deteriorate the subthreshold characteristics of TFTs but it can improve the maximum transconductance. We suggest that these degradations are due to the generation of the deep states and we find these degradations can be recovered by a low-temperature anneal in H2/N2 gas ambient
Keywords :
MOS memory circuits; SRAM chips; ULSI; elemental semiconductors; rapid thermal annealing; silicon; thin film transistors; H2-N2; TFT SRAM process; deep states; low-temperature anneal; maximum transconductance; polysilicon thin-film transistors; rapid thermal annealing; subthreshold characteristics; Boron; Integrated circuit technology; Leakage current; Random access memory; Rapid thermal annealing; Rapid thermal processing; Simulated annealing; Thermal degradation; Thin film transistors; Ultra large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
