Title :
A new algorithm for faster full-thermodynamic device simulations
Author :
Chuang, Ming-Yeh ; Law, Mark E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fDate :
9/1/1997 12:00:00 AM
Abstract :
Full-thermodynamic device simulation solves drift-diffusion (DD), energy balance, and lattice self-heating equations simultaneously and the solution time is extensive. An algorithm to reduce the solution time is presented. The method uses a single lattice temperature to describe the self-heating in the whole semiconductor device. It is shown that the solution time is reduced by 20% and little error is induced compared with the full-thermodynamic simulations. This approach appears useful for submicron device structures
Keywords :
diffusion; digital simulation; semiconductor device models; thermodynamics; drift-diffusion equations; energy balance equations; full-thermodynamic device simulations; lattice self-heating equations; lattice temperature; semiconductor device models; submicron device structures; Charge carrier processes; Energy exchange; Floods; Lattices; Object oriented modeling; Poisson equations; Predictive models; Semiconductor devices; Temperature; Thermodynamics;
Journal_Title :
Electron Devices, IEEE Transactions on
