Title :
The 2-D-3-D crossover in modulation-doped GaAs-Ga1-xAl xAs quantum wells
Author :
Qu, Fanyao ; Morais, P.C.
Author_Institution :
Dept. de Fisica, Brasilia Univ., Brazil
fDate :
9/1/1997 12:00:00 AM
Abstract :
We report on a method to analyze the 2-D-3-D crossover in n-type modulation-doped quantum wells. Finite well barrier, first and second subband population, many-body effects, and residual doping are included in our calculation. We found that the 2-D-3-D crossover remarkably depends not only upon the geometrical parameters, as for instance, the spacer layer width and quantum-well width, but also upon a residual p-type doping intentionally introduced. A diagram showing the 2-D-3-D dimensional crossover is presented
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor doping; semiconductor quantum wells; 2-D-3-D crossover; GaAs-Ga1-xAlxAs quantum wells; GaAs-GaAlAs; finite well barrier; geometrical parameters; many-body effects; modulation-doped; n-type modulation-doped quantum wells; quantum-well width; residual doping; residual p-type doping; spacer layer width; subband population; Doping; Epitaxial layers; Optical modulation; Optical scattering; Photonic band gap; Plasma density; Plasma materials processing; Quantum wells; Semiconductor materials; Two dimensional displays;
Journal_Title :
Quantum Electronics, IEEE Journal of
