Title :
Monte Carlo simulations of carrier transport in AlGaInP laser diodes
Author :
Crow, G.C. ; Abram, R.A.
Author_Institution :
Dept. of Phys., Durham Univ., UK
fDate :
9/1/1997 12:00:00 AM
Abstract :
A self-consistent ensemble Monte Carlo simulation of charge transport in AlGaInP quantum-well (QW) lasers has been developed in an effort to understand the temperature sensitivity of these devices. In particular, the lasing capability of a three-well design has been studied at 300 and 360 K. Although the electron and hole leakage currents are found to increase with the temperature, this does not explain a reduction in the emitted light hole emission time intensity for the particular device studied. Instead, the fall in the light output is due to increased emission from the QW´s, since this reduces the net electron and hole capture efficiency
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; carrier mobility; gallium compounds; indium compounds; laser theory; quantum well lasers; semiconductor device models; sensitivity; 300 K; 360 K; AlGaInP; AlGaInP QW lasers; AlGaInP laser diodes; Monte Carlo simulations; carrier transport; charge transport; electron capture efficiency; electron leakage currents; emitted light hole emission time intensity; hole capture efficiency; hole leakage currents; self-consistent ensemble Monte Carlo simulation; temperature sensitivity; three-well design; Charge carrier processes; Diode lasers; Electron emission; Electron optics; Laser modes; Optical design; Photonic band gap; Quantum well lasers; Semiconductor lasers; Temperature sensors;
Journal_Title :
Quantum Electronics, IEEE Journal of
