Vortex-induced voltage instabilities in a superconducting BSCCO thin film

Author

Savo, B. ; Coccorese, C.

Author_Institution

Dipt. di Fisica, Salerno Univ., Italy

Volume

9

Issue

2

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

2336

Lastpage

2339

Abstract

Flux-induced voltage switching events assuming the form of random telegraph signals have been investigated in a current biased Bi/sub 2/Sr/sub 2/Ca/sub 1/Cu/sub 2/O/sub 8+x/ (BSCCO) thin film, at weak magnetic fields (<10 G) and at temperatures ranging below 7 K. The observed phenomena cannot be framed within traditional theoretical models. Rather, they strongly indicate two distinct vortex dynamical states at the basis of the switching events. A novel interpretation is proposed, relying on the random decay of a flux-creep process in the superconductor.

Keywords

bismuth compounds; calcium compounds; flux creep; flux flow; high-temperature superconductors; strontium compounds; superconducting thin films; 7 K; Bi/sub 2/Sr/sub 2/Ca/sub 1/Cu/sub 2/O/sub 8+x/; Bi/sub 2/Sr/sub 2/Ca/sub 1/Cu/sub 2/O/sub 8/; current biased thin film; flux-creep process random decay; flux-induced voltage switching events; random telegraph signals; vortex dynamical states; vortex-induced voltage instabilities; weak magnetic fields; Bismuth compounds; Energy barrier; Granular superconductors; Magnetic field measurement; Magnetic films; Superconducting device noise; Superconducting epitaxial layers; Superconducting thin films; Temperature; Voltage;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.784939

Filename

784939