DocumentCode :
1548654
Title :
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
Author :
Larentis, Stefano ; Nardi, Federico ; Balatti, Simone ; Gilmer, David C. ; Ielmini, Daniele
Author_Institution :
Dipartimento di Elettronica e Informazione and Italian Universities Nanoelectronics Team (IU.NET), Politecnico di Milano, Milan, Italy
Volume :
59
Issue :
9
fYear :
2012
Firstpage :
2468
Lastpage :
2475
Abstract :
Resistive-switching memory (RRAM) based on transition metal oxides is a potential candidate for replacing Flash and dynamic random access memory in future generation nodes. Although very promising from the standpoints of scalability and technology, RRAM still has severe drawbacks in terms of understanding and modeling of the resistive-switching mechanism. This paper addresses the modeling of resistive switching in bipolar metal-oxide RRAMs. Reset and set processes are described in terms of voltage-driven ion migration within a conductive filament generated by electroforming. Ion migration is modeled by drift–diffusion equations with Arrhenius-activated diffusivity and mobility. The local temperature and field are derived from the self-consistent solution of carrier and heat conduction equations in a 3-D axis-symmetric geometry. The model accounts for set–reset characteristics, correctly describing the abrupt set and gradual reset transitions and allowing scaling projections for metal-oxide RRAM.
Keywords :
Conductivity; Heating; Mathematical model; Resistive switching; Thermal conductivity; Insulator–metal transition; memory modeling; nonvolatile memory (NVM); resistive switching; resistive-switching memory (RRAM);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2202320
Filename :
6226448
Link To Document :
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