DocumentCode
1548656
Title
Bismuth nano-Hall probes fabricated by focused ion beam milling for direct magnetic imaging by room temperature scanning Hall probe microscopy
Author
Sandhu, A. ; Masuda, H. ; Kurosawa, K. ; Oral, A. ; Bending, S.J.
Author_Institution
Dept. of Electr. & Electron. Eng., Tokai Univ., Hiratsuka, Japan
Volume
37
Issue
22
fYear
2001
fDate
10/25/2001 12:00:00 AM
Firstpage
1335
Lastpage
1336
Abstract
Bismuth nano-Hall probes with dimensions ~120 × 120 nm were fabricated by focused ion beam milling and used for the direct room temperature magnetic imaging of crystalline garnet thin films and strontium ferrite permanent magnets by scanning Hall probe microscopy. At driving currents of 40 μA, the Hall coefficient and magnetic field sensitivity of the Bi nano-Hall probes were 3.3 × 10-4 Ω/G and 7.2 G/√Hz, respectively
Keywords
Hall effect devices; bismuth; focused ion beam technology; imaging; magnetic domains; magnetic sensors; probes; scanning probe microscopy; 120 nm; 40 muA; Bi; Bi nano-Hall probes; FIB milling; Hall coefficient; Sr ferrite permanent magnets; SrFe12O19; crystalline garnet thin films; direct magnetic imaging; focused ion beam milling; magnetic field sensitivity; room temperature scanning Hall probe microscopy;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010908
Filename
964279
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