Title :
Bismuth nano-Hall probes fabricated by focused ion beam milling for direct magnetic imaging by room temperature scanning Hall probe microscopy
Author :
Sandhu, A. ; Masuda, H. ; Kurosawa, K. ; Oral, A. ; Bending, S.J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokai Univ., Hiratsuka, Japan
fDate :
10/25/2001 12:00:00 AM
Abstract :
Bismuth nano-Hall probes with dimensions ~120 × 120 nm were fabricated by focused ion beam milling and used for the direct room temperature magnetic imaging of crystalline garnet thin films and strontium ferrite permanent magnets by scanning Hall probe microscopy. At driving currents of 40 μA, the Hall coefficient and magnetic field sensitivity of the Bi nano-Hall probes were 3.3 × 10-4 Ω/G and 7.2 G/√Hz, respectively
Keywords :
Hall effect devices; bismuth; focused ion beam technology; imaging; magnetic domains; magnetic sensors; probes; scanning probe microscopy; 120 nm; 40 muA; Bi; Bi nano-Hall probes; FIB milling; Hall coefficient; Sr ferrite permanent magnets; SrFe12O19; crystalline garnet thin films; direct magnetic imaging; focused ion beam milling; magnetic field sensitivity; room temperature scanning Hall probe microscopy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010908
