A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETs

We propose a new classical physics rigorous description of the drain current of long channel symmetric double-gate MOSFET with a doped body based on a single integral equation. Whereas existing descriptions are valid for limited ranges of doping concentrations, the equation presented here is valid for any doping concentration, including the so-called intrinsic body case. The description is based on a simple procedure to calculate the surface potential continuously from accumulation to inversion.