Title :
High-temperature (T ⩾ 470 K) pulsed operation of 5.5 μm quantum cascade lasers with high-reflection coating
Author :
Ulbrich, N. ; Scarpa, G. ; Sigl, A. ; Rosskopf, J. ; Böhm, G. ; Abstreiter, G. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. of Munich, Garching, Germany
fDate :
10/25/2001 12:00:00 AM
Abstract :
High-temperature operation of 5.5 μm strain-compensated InGaAs/InAlAs quantum cascade lasers with high-reflection (HR) coating is presented. A threshold current density of 7.5 kA/cm2 was observed at the record high temperature of 470 K using HR coating on both facets with reflectivities of 99.6 and 80.2%, respectively
Keywords :
III-V semiconductors; aluminium compounds; antireflection coatings; current density; gallium arsenide; high-temperature electronics; indium compounds; laser cavity resonators; quantum well lasers; reflectivity; 470 K; 5.5 micron; InGaAs-InAlAs; cleaved laser facets; heatsink temperature; high-reflection coating; high-temperature pulsed operation; reflectivities; strain-compensated InGaAs/InAlAs quantum cascade lasers; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010892
